Method of manufacturing semiconductor devices and semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a first hard mask layer over a substrate;
• forming a mandrel layer over the first hard mask layer;
• forming mandrel patterns by patterning the mandrel layer using the first hard mask patterns as an etching mask,
• forming sidewall patterns on sidewalls of the mandrel patterns;
• removing the mandrel patterns, thereby leaving the sidewall patterns inclined with respect to a direction normal to an upper surface of the substrate;
• removing part of the inclined sidewall patterns;
• after the removing part of the inclined sidewall patterns, patterning the hard mask layer by using a remaining part of the inclined sidewall patterns as an etching mask, thereby forming second hard mask patterns;
• and
• patterning the substrate by using the second hard mask patterns as an etching mask, thereby forming fin structures.

A method of manufacturing a semiconductor device, comprising:

• forming mandrel patterns over a hard mask layer disposed over a substrate;
• forming sidewall layers on sidewalls of the mandrel patterns;
• removing the mandrel patterns, thereby leaving the sidewall layers as first hard mask patterns inclined with respect to a direction normal to an upper surface of the substrate;
• patterning the hard mask layer by using the inclined first hard mask patterns as an etching mask, thereby forming second hard mask patterns;
• and
• patterning the substrate by using the second hard mask patterns as an etching mask, thereby forming fin structures,
• wherein an inclination angle of a pair of the sidewall layers is 1-7 degrees toward a space from which a corresponding one of the mandrel patterns is removed.