Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• preparing a substrate comprising a first region and a second region next to the first region;
• forming a first channel pattern in the first region and forming a second channel pattern in the second region, wherein the first channel pattern comprises a first plurality of semiconductor patterns vertically stacked on the substrate, a first inner region, and a first outer region, and wherein the second channel pattern comprises a second plurality of semiconductor patterns vertically stacked on the substrate, a second inner region, and a second outer region;
• forming a first protective mask surrounding the first channel pattern and the second channel pattern;
• removing the first protective mask from the first outer region and the second outer region;
• forming an additional mask layer surrounding the first channel pattern and the second channel pattern, wherein the additional mask layer does not have etch selectivity with the first protective mask;
• forming, on the additional mask layer, a second protective mask having etch selectivity with the first protective mask and the additional mask layer;
• forming a first photo mask layer covering the second protective mask in the first region;
• and
• exposing a sidewall of the second protective mask and a sidewall of the additional mask layer in a boundary between the first region and the second region by removing the second protective mask, the additional mask layer, and the first protective mask from the second region by using the first photo mask layer as an etch mask,
• wherein the first inner region comprises spaces between adjacent semiconductor patterns of the first plurality of semiconductor patterns, and the first outer region comprises a space around the first plurality of semiconductor patterns excluding the first inner region, and
• wherein the second inner region comprises spaces between adjacent semiconductor patterns of the second plurality of semiconductor patterns, and the second outer region comprises a space around the second plurality of semiconductor patterns excluding the second inner region.

A method of manufacturing a semiconductor device, the method comprising:

• preparing a substrate comprising a first region and a second region next to the first region;
• forming a first channel pattern in the first region and forming a second channel pattern in the second region, wherein the first channel pattern comprises a first plurality of semiconductor patterns vertically stacked on the substrate and a first inner region, and wherein the second channel pattern comprises a second plurality of semiconductor patterns vertically stacked on the substrate and a second inner region;
• forming a high-k dielectric layer covering the first channel pattern and the second channel pattern;
• forming a first protective mask filling the first inner region and the second inner region and surrounding the first channel pattern and the second channel pattern in an outer region, wherein the outer region comprises a remaining space on the first plurality of semiconductor patterns and the second plurality of semiconductor patterns excluding the first inner region and the second inner region;
• exposing at least part of a surface of the high-k dielectric layer by removing the first protective mask from the outer region;
• forming an additional mask layer covering the exposed surface of the high-k dielectric layer and sidewalls of the first protective mask, wherein the additional mask layer has no etch selectivity with the first protective mask;
• forming the first protective mask and a second protective mask having etch selectivity with the additional mask layer on the additional mask layer;
• forming a photo mask layer covering the second protective mask in the first region;
• and
• removing the second protective mask, the additional mask layer, and the first protective mask from the second region by using the photo mask layer as an etch mask.