Method for fabricating semiconductor device
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsWen Wei Wang, Xiang Xiang Zhou, Xiang Wang, Hailong Gu, Wen Yi Tan
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Abstract
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a first transistor region and a second transistor region and then forming a first gate structure on the first transistor region and a second gate structure on the second transistor region, in which the first gate structure includes a first hard mask, the second gate structure includes a second hard mask, and the first hard mask and the second hard mask have different thicknesses. Next, a patterned mask is formed around the first gate structure and the second gate structure, and then part of the first hard mask is removed.
Claims8
A method for fabricating a semiconductor device, comprising:
- providing a substrate having a first transistor region and a second transistor region;
- forming a first gate structure on the first transistor region and a second gate structure on the second transistor region, wherein the first gate structure comprises a first hard mask, the second gate structure comprises a second hard mask, and the first hard mask and the second hard mask comprise different thicknesses;
- forming a patterned mask around the first gate structure and the second gate structure;
- and
- removing part of the first hard mask.
Dependencies are inferred from the claim text.