Process for the manufacture of a semiconductor structure comprising a polycrystalline silicon carbide substrate and an active layer of single-crystal silicon carbide
OwnerHugo Biard, Eric Guiotinventors
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Abstract
A method of manufacturing a semiconductor structure, which includes a support substrate of polycrystalline silicon carbide and an active layer of single-crystal silicon carbide, involves: the formation of a support substrate including a stack of a first layer of polycrystalline SiC mainly of polytype 3C and of a second layer of polycrystalline SiC mainly of polytype 4H and/or 6H, the bonding of a donor substrate including an active layer of single-crystal SiC of polytype 4H or 6H to a face of polytype 4H and/or 6H of the support substrate, and the transfer of the active layer onto the support substrate.
Claims20
A method of manufacturing a semiconductor structure including a support substrate of polycrystalline silicon carbide and an active layer of single-crystal silicon carbide, the method comprising:
- forming a support substrate including a stack of a first layer of polycrystalline SiC mainly of polytype 3C and of a second layer of polycrystalline SiC mainly of polytype 4H and/or 6H,
- bonding a donor substrate including an active layer of single-crystal SiC of polytype 4H or 6H to a face of polytype 4H and/or 6H of the support substrate, and
- transferring the active layer onto the support substrate.
A semiconductor structure successively comprising, from back face of the structure to its a front face of the structure:
- a first layer of polycrystalline SiC mainly of polytype 3C;
- a second layer of polycrystalline SiC mainly of polytype 4H and/or 6H;
- and
- an active layer of single-crystal SiC of polytype 4H or 6H.
Dependencies are inferred from the claim text.