Contact structure for semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYan-Ming Tsai, Chih-Wei Chang, Ming-Hsing Tsai, Sheng-Hsuan Lin, Hung-Hsu Chen, Wei-Yip Loh
Life of this patent
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Abstract
A device includes a fin extending from a semiconductor substrate, a gate stack over and along a sidewall of the fin, an isolation region surrounding the gate stack, an epitaxial source/drain region in the fin and adjacent the gate stack, and a source/drain contact extending through the isolation region, including a first silicide region in the epitaxial source/drain region, the first silicide region including NiSi2, a second silicide region on the first silicide region, the second silicide region including TiSix, and a conductive material on the second silicide region.
Claims20
A method comprising:
- depositing a first metal layer on a semiconductor region, wherein the first metal layer comprises a first metal;
- depositing a second metal layer on the first metal layer, wherein the first metal layer completely separates the second metal layer from the semiconductor region, and wherein the second metal layer comprises a second metal different from the first metal;
- and
- performing a first annealing process to form a first silicide region comprising the first metal and a second silicide region comprising the second metal.
A method comprising:
- forming a source/drain region;
- forming a first silicide region and a second silicide region, comprising:
- depositing a first material layer on the source/drain region, wherein the first material layer comprises titanium (Ti);
- depositing a second material layer on the first material layer, wherein the second material layer comprises nickel (Ni);
- performing a first annealing process;
- and
- forming a source/drain contact in contact with the first silicide region, wherein the second silicide region is separated from the source/drain contact by the first silicide region.
A method comprising:
- forming a dielectric layer over a semiconductor region;
- forming an opening through the dielectric layer to expose a surface of the semiconductor region;
- depositing a first metal layer on the surface of the semiconductor region, wherein the first metal layer comprises a first metal;
- depositing a second metal layer on the first metal layer, and wherein the second metal layer comprises a second metal different from the first metal;
- forming a first silicide region and a second silicide region in the semiconductor region, wherein the first silicide region comprises the first metal, and wherein the second silicide region comprises the second metal;
- and
- forming a contact plug in the opening, wherein the contact plug is in contact the first silicide region, and wherein the first silicide region completely separates the contact plug from the second silicide region.
Dependencies are inferred from the claim text.