Devices and methods for forming devices with inner spacers
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Lun Chang, Kuan-Ting Pan
Life of this patent
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Abstract
Provided are devices and methods for forming devices. An exemplary method includes etching a cavity in a vertical direction into a fin structure including at least one semiconductor nanosheet overlying a sacrificial layer, wherein the cavity is formed with a sidewall; recessing the sacrificial layer by a lateral distance to a recessed surface; forming an inner spacer laterally adjacent to the recessed surface of the sacrificial layer, wherein the inner spacer has a lateral width greater than the lateral distance; and growing epitaxial material in the cavity to form a source/drain region laterally adjacent to the inner spacer.
Claims20
A method comprising:
- etching a cavity in a vertical direction into a fin structure including at least one semiconductor nanosheet overlying a sacrificial layer, wherein the cavity is formed with a sidewall;
- recessing the sacrificial layer by a lateral distance to a recessed surface;
- forming an inner spacer laterally adjacent to the recessed surface of the sacrificial layer, wherein the inner spacer has a lateral width greater than the lateral distance;
- and
- growing epitaxial material in the cavity to form a source/drain region laterally adjacent to the inner spacer.
A method comprising:
- etching a cavity in a vertical direction into a fin structure including a semiconductor nanosheet overlying a sacrificial layer;
- performing a lateral recess process to etch the sacrificial layer in a lateral direction perpendicular to the vertical direction, wherein the sacrificial layer is formed with a recessed surface;
- depositing a first inner spacer layer in the cavity, wherein the first inner spacer layer is located adjacent to the semiconductor nanosheet and on the recessed surface of the sacrificial layer;
- removing the first inner spacer layer from the semiconductor nanosheet, wherein a remaining portion of the first inner spacer layer remains on the recessed surface of the sacrificial layer;
- growing semiconductor material on the semiconductor nanosheet;
- depositing a second inner spacer layer in the cavity, wherein the second inner spacer layer is located adjacent to the semiconductor material and to the remaining portion of the first inner spacer layer;
- and
- removing the second inner spacer layer from the semiconductor material, wherein a remaining portion of the second inner spacer layer remains on the remaining portion of the first inner spacer layer.
A semiconductor device comprising:
- a first source/drain region distanced from a second source/drain region in a lateral Y-direction;
- a fin structure including a semiconductor nanosheet, wherein the semiconductor nanosheet extends in the lateral Y-direction from a first end adjacent the first source/drain region to a second end adjacent the second source/drain region, wherein the first end defines a first vertical plane perpendicular to the lateral Y-direction;
- a portion of a gate structure located under the semiconductor nanosheet and extending from a first end to a second end;
- and
- an inner spacer located under the semiconductor nanosheet and abutting the first end of the portion of the gate structure, wherein the first vertical plane passes through the inner spacer.
Dependencies are inferred from the claim text.