Power semiconductor device and power converter

A power semiconductor device, comprising:

• a substrate:
• a drift layer in the substrate including an active area having doped regions and a termination area configured to surround the active area;
• and
• wherein the termination area comprises at least one blocking region and a plurality of separation regions,
• wherein the at least one blocking region contacts a side of at least one doped region disposed at an edge of the active area,
• wherein the plurality of separation regions are configured to be disposed along a lateral direction of the at least one blocking region, each of the plurality of separation regions including a first separation sub-region having a first dopant concentration and a second separation sub-region having a second dopant concentration less than the first separation sub-region.

A power converter, comprising:

• a plurality of power semiconductor modules,
• wherein each of the plurality of power semiconductor modules comprises a plurality of power semiconductor devices,
• wherein each of the plurality of power semiconductor devices comprises:
• a substrate:
• a drift layer formed in the substrate including an active area having doped regions and a termination area configured to surround the active area;
• and
• a junction termination extension (JTE) in the termination area,
• wherein the substrate and the drift layer comprise a first conductivity type,
• wherein the doped regions and the JTE comprise a second conductivity type,
• wherein the JTE comprises at least one blocking region and a plurality of separation regions located farther from the outermost body than the at least one blocking region,
• wherein each of the plurality of separation regions comprises two or more separation sub-regions, and
• wherein the two or more separation sub-regions are configured to have different doping concentrations.