Rf switch
AssigneeSTMicroelectronics International N.V.
InventorsSiddhartha DHAR, Stephane MONFRAY
Life of this patent
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Abstract
A transistor suited for use as an RF switch includes a semiconductor layer and a stack of a gate insulator layer and a conductive gate layer. A length of the conductive gate layer is smaller on the side of a lower surface, located in the vicinity of the gate insulator layer, and is greater on the side of an upper surface, opposite to the lower surface. Lateral sides of the conductive gate layer are covered, on a lower portion, with a first material and, on an upper portion, with a second material. The first material has a Young's modulus greater than a Young's modulus of the second material.
Claims22
A transistor, comprising:
- a semiconductor layer;
- a stack comprising a gate insulator layer and a conductive gate over the semiconductor layer;
- wherein a length of the conductive gate is smaller on a side of a lower surface of the conductive gate, located in a vicinity of the gate insulator layer, and is greater on a side of an upper surface of the conductive gate, said upper surface being opposite to the lower surface;
- and
- a spacer structure adjacent lateral sides of the conductive gate, said spacer structure comprising a first material at a lower portion of the conductive gate where the length of the conductive gate is smaller, and a second material at an upper portion of the conductive gate where the length of the conductive gate is greater;
- wherein the first material has a Young's modulus greater than a Young's modulus of the second material.
Dependencies are inferred from the claim text.