Method of forming gate structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Chieh Wang, Sheng-Wei Yeh, Yueh-Ching Pai, Chi-Jen Yang
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Abstract
Provided are a gate structure and a method of forming the same. The gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is disposed over the gate dielectric layer. The cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. In addition, a semiconductor device including the gate structure is provided.
Claims20
A method of forming a gate structure, comprising:
- providing an initial structure having a gate dielectric layer thereon;
- forming a cluster layer on the gate dielectric layer by an atomic layer deposition (ALD) tool, wherein the forming the cluster layer comprises:
- loading the initial structure into a first chamber of the ALD tool to form a work function metal layer on the gate dielectric layer of the initial structure in the first chamber;
- transferring the initial structure from the first chamber to a second chamber to form a barrier layer on the work function metal layer in the second chamber;
- forming a first cap layer on the barrier layer in the second chamber;
- and
- transferring the initial structure from the second chamber to a third chamber to form a glue layer on the first cap layer, wherein the first, second, and third chambers remain under the same vacuum condition;
- and
- forming a metal layer on the glue layer.
A method of forming a gate structure, comprising:
- providing an initial structure having a gate dielectric layer thereon;
- forming a cluster layer on the gate dielectric layer by an atomic layer deposition (ALD) tool, wherein the forming the cluster layer comprises:
- loading the initial structure into a first chamber of the ALD tool to form a work function metal layer on the gate dielectric layer of the initial structure in the first chamber;
- transferring the initial structure from the first chamber to a second chamber to form a cap layer on the work function metal layer in the second chamber;
- forming a barrier layer on the cap layer in the second chamber;
- and
- transferring the initial structure from the second chamber to a third chamber to form a glue layer on the barrier layer, wherein the first, second, and third chambers remain under the same vacuum condition;
- and
- forming a metal layer on the glue layer.
A method of forming a gate structure, comprising:
- forming a cluster layer on a gate dielectric layer, wherein the cluster layer comprises a amorphous silicon layer;
- forming a TiON layer on the cluster layer;
- and
- forming a metal layer on the TiON layer.
Dependencies are inferred from the claim text.