Semiconductor device and electronic device
AssigneeSony Semiconductor Solutions Corporation
InventorsRYOHEI TAKAYANAGI, AKIKO HONJO
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AssigneeSony Semiconductor Solutions Corporation
InventorsRYOHEI TAKAYANAGI, AKIKO HONJO
Estimating the term…
The occurrence of a short-channel effect is suppressed. A semiconductor device includes a semiconductor layer having an upper surface portion, a lower surface portion, and a side surface portion, and a field-effect transistor in which a channel forming portion is provided in the semiconductor layer. The field effect transistor includes a gate electrode provided in the channel forming portion of the semiconductor layer over the upper surface portion and the side surface portion of the semiconductor layer with a gate insulating film interposed therebetween, and a pair of main electrode regions provided on an outer side of the semiconductor layer in a channel length direction of the channel forming portion and separated from each other with the channel forming portion interposed therebetween. Each of the pair of main electrode regions includes a conductor layer that is provided in contact with the side surface portion of the semiconductor layer and that is in a layer different from the semiconductor layer.
A semiconductor device comprising:
An electronic device comprising:
Dependencies are inferred from the claim text.