Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode;
• a third electrode including first electrode portion, a position of the third electrode in a first direction from the first electrode to the second electrode being between a position of the first electrode in the first direction and a position of the second electrode in the first direction;
• a first semiconductor member including Alx1Ga1-x1N (0≤x1<1), the first semiconductor member including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region, a direction from the first partial region to the first electrode being along a second direction crossing the first direction, a direction from the second partial region to the second electrode being along the second direction, a direction from the third partial region to the first electrode portion being along the second direction, a position of the fourth partial region in the first direction being between a position of the first partial region in the first direction and a position of the third partial region in the first direction, a position of the fifth partial region in the first direction being between the position of the third partial region in the first direction and a position of the second partial region in the first direction, a position of the sixth partial region in the first direction being between the position of the fourth partial region in the first direction and the position of the third partial region in the first direction, a position of the seventh partial region in the first direction being between the position of the third partial region in the first direction and the position of the fifth partial region in the first direction;
• a second semiconductor member including Alx2Ga1-x2N (0<x2≤1, x1<x2), the second semiconductor member including a first semiconductor portion and a second semiconductor portion, a direction from the fourth partial region to the first semiconductor portion being along the second direction, a direction from the fifth partial region to the second semiconductor portion being along the second direction;
• a first compound member includes Alz1Ga1-z1N (0<z1≤1, x2<z1), the first compound member including a first region, a second region, a third region, a fourth region, and a fifth region, the first region being provided between the fourth partial region and the first electrode portion in the first direction, the second region being provided between the first electrode portion and the fifth partial region in the first direction, the third region being provided between the third partial region and the first electrode portion in the second direction, the fourth region being provided between the first region and the third region, the fifth region being provided between the third region and the second region, the third region including crystal;
• and
• a first insulating member including a first insulating portion and a second insulating portion, the first insulating portion being provided between the fourth partial region and the third region in the first direction, the first insulating portion being provided between the sixth partial region and the fourth region in the second direction, the second insulating portion being provided between the third region and the fifth partial region in the first direction, the second insulating portion being provided between the seventh partial region and the fifth region in the second direction, at least a part of the first insulating portion and at least a part of the second insulating portion being amorphous.