Manufacturing method for semiconductor device
AssigneeJapan Display Inc.
InventorsHajime WATAKABE, Masashi TSUBUKU, Toshinari SASAKI, Takaya TAMARU
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Abstract
A method for manufacturing a semiconductor device comprises steps of: forming an oxide semiconductor layer on a substrate by a sputtering method; performing a first heat treatment on the oxide semiconductor layer after placing the substrate on which the oxide semiconductor layer is formed in a heating furnace having a heating medium maintained at a preset temperature; forming a gate insulating layer on the oxide semiconductor layer after the first heat treatment; and forming a gate electrode on the gate insulating layer. When the substrate is installed in the heating furnace, a temperature drop of the heating medium is kept within 15% of the set temperature.
Claims20
A method for manufacturing a semiconductor device, the method comprising steps of:
- forming an oxide semiconductor layer on a substrate by a sputtering method;
- performing a first heat treatment on the oxide semiconductor layer after placing the substrate on which the oxide semiconductor layer is formed in a heating furnace having a heating medium maintained at a preset temperature;
- forming a gate insulating layer on the oxide semiconductor layer after the first heat treatment;
- and
- forming a gate electrode on the gate insulating layer, wherein
- when the substrate is installed in the heating furnace, a temperature drop of the heating medium is kept within 15% of the preset temperature.
A method for manufacturing a semiconductor device, the method comprising steps of:
- forming a gate electrode on a substrate;
- forming a gate insulating layer on the gate electrode;
- forming an oxide semiconductor layer on the gate insulating layer by a sputtering method;
- and
- performing a first heat treatment on the oxide semiconductor layer after placing the substrate on which the oxide semiconductor layer is formed in a heating furnace having a heating medium maintained at a preset temperature;
- wherein
- when the substrate is installed in the heating furnace, a temperature drop of the heating medium is kept within 15% of the set temperature.
Dependencies are inferred from the claim text.