Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorsSang Chul OH, Myoungsub KIM
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include: a first conductive line; a second conductive line located over the first conductive line, wherein the first conductive line and the second conductive line extend in different directions, intersecting each other; a variable resistance pattern located between the first conductive line and the second conductive line; a first electrode pattern located between the first conductive line and the variable resistance pattern; a first resistivity barrier pattern located between the first conductive line and the first electrode pattern; and a first diffusion barrier pattern located between the first resistivity barrier pattern and the first electrode pattern.
Claims33
A semiconductor device comprising:
- a first conductive line;
- a second conductive line located over the first conductive line, wherein the first conductive line and the second conductive line extend in different directions, intersecting each other;
- a variable resistance e pattern located between the first conductive line and the second conductive line;
- a first electrode pattern located between the first conductive line and the variable resistance pattern;
- a first resistivity barrier pattern located between the first conductive line and the first electrode pattern;
- and
- a first diffusion barrier pattern located between the first resistivity barrier pattern and the first electrode pattern.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a first resistivity barrier layer over a first conductive layer;
- forming a first diffusion barrier layer over the first resistivity barrier layer;
- forming a first electrode layer over the first diffusion barrier layer;
- forming a variable resistance layer over the first electrode layer;
- forming a second electrode layer over the variable resistance layer;
- and
- forming a second conductive layer over the second electrode layer.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a first conductive layer;
- forming a first resistivity barrier layer over the first conductive layer;
- forming a first diffusion barrier layer over the first resistivity barrier layer;
- forming a first electrode layer over the first diffusion barrier layer;
- forming a variable resistance layer over the first electrode layer;
- forming a second electrode layer over the variable resistance layer;
- forming a memory line that includes a second electrode line, a variable resistance line, and a first electrode line by etching the second electrode layer, the variable resistance layer, and the first electrode layer in a first direction;
- forming a first diffusion barrier line and a first resistivity barrier line by etching the first diffusion barrier layer and the first resistivity barrier layer in the first direction;
- forming a second conductive layer over the memory line;
- forming a second conductive line by etching the second conductive layer in a second direction that intersects the first direction;
- forming a memory cell that includes a second electrode pattern, a variable resistance pattern, and a first electrode pattern by etching the memory line in the second direction;
- and
- forming a first diffusion barrier pattern and a first resistivity barrier pattern by etching the first diffusion barrier line and the first resistivity barrier line in the second direction.
Dependencies are inferred from the claim text.