Semiconductor memory structure and method for forming the same
AssigneeWinbond Electronics Corp.
InventorsJi-Min LIN, Pin-Hung CHEN
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Abstract
A method for forming a semiconductor memory structure includes forming a bottom electrode layer over an active region, depositing a first high-k dielectric material on the bottom electrode layer, depositing a second high-k dielectric material on the first high-k dielectric material, annealing the first and second high-k dielectric materials, after the annealing process, depositing a third high-k dielectric material on the second high-k dielectric material, and forming a top electrode layer on the third high-k dielectric material.
Claims20
A method for forming a semiconductor memory structure, comprising:
- forming a bottom electrode layer over an active region;
- depositing a first high-k dielectric material on the bottom electrode layer;
- depositing a second high-k dielectric material on the first high-k dielectric material;
- performing an annealing process on the first high-k dielectric material and the second high-k dielectric material;
- after the annealing process, depositing a third high-k dielectric material on the second high-k dielectric material;
- and
- forming a top electrode layer on the third high-k dielectric material.
A semiconductor memory structure, comprising:
- a transistor disposed over a substrate;
- a bottom electrode layer disposed over the transistor and electrically connected to a first source/drain region of the transistor;
- a capacitor dielectric film comprising, sequentially disposed over the bottom electrode layer, a first high-k dielectric material, a second high-k dielectric material and a third high-k dielectric material, wherein the second high-k dielectric material contains zirconium and has:
- a first zirconium concentration at an interface between the first high-k dielectric material and the second high-k dielectric material, and
- a second zirconium concentration at an interface between the third high-k dielectric material and the second high-k dielectric material, wherein the first zirconium concentration is higher than the second zirconium concentration;
- and
- a top electrode layer disposed over the capacitor dielectric film.
Dependencies are inferred from the claim text.