Memory cell with buried power grid, and method of fabricating same

A device comprising:

• active regions extending in a first direction;
• gate structures over the active regions and extending in a second direction perpendicular to the first direction;
• contact-to-source/drain structures (MD structures) which are over the active regions, extend in the second direction and are interspersed among corresponding ones of the gate structures;
• via-to-gate/MD (VGD) structures over corresponding one of the gate structures or the MD structures;
• in a first metallization layer over the VGD structures, first front-side segments extending in the first direction and including one or more front-side routing (FRTE) segments;
• buried segment-to-source/drain structures (BVD structures) under the active regions;
• and
• in a first buried metallization layer under the BVD structures, first back-side segments extending in the first direction and including one or more first back-side power grid (BPG) segments.

A device comprising:

• active regions extending in a first direction;
• gate structures over the active regions and extending in a second direction perpendicular to the first direction;
• contact-to-source/drain structures (MD structures) which are over the active regions, extend in the second direction and are interspersed among corresponding ones of the gate structures;
• via-to-gate/MD (VGD) structures over corresponding one of the gate structures or the MD structures;
• in a first metallization layer over the VGD structures, first front-side segments extending in the first direction and including one or more front-side routing (FRTE) segments;
• buried segment-to-source/drain structures (BVD structures) under the active regions;
• and
• in a first buried metallization layer under the BVD structures, first back-side segments extending in the first direction and including one or more first back-side power grid (BPG) segments;
• and
• the device substantially having a midline which extends parallel to the second direction;
• and
• the BVD structures being substantially aligned to the midline.