Image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorSEOKSAN KIM
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Abstract
An image sensor includes a plurality of pixels. Each pixel includes a first photo diode, a floating diffusion node, a first capacitor, a second capacitor, a first sampling transistor, and a second sampling transistor. The first sampling transistor is configured to sample charges from the first capacitor. The second sampling transistor is configured to sample charges from the second capacitor. The image sensor operates the first capacitor to store one of reset charges according to a voltage of the floating diffusion node reset and signal charges according to a voltage of the floating diffusion node in which the photo charges are accumulated, operates the second capacitor to stores the other one of the reset charges and the signal charges and changes types of charges stored in each of the first capacitor and the second capacitor.
Claims20
An image sensor comprising a plurality of pixels, wherein a pixel among the plurality of pixels comprises:
- a first photo diode;
- a floating diffusion node configured to accumulate photo charges generated by the first photo diode;
- a first capacitor;
- a second capacitor;
- a first sampling transistor configured to sample charges from the first capacitor;
- and
- a second sampling transistor configured to sample charges from the second capacitor,
- wherein the image sensor operates the first capacitor to store one of reset charges according to a voltage of the floating diffusion node reset and signal charges according to a voltage of the floating diffusion node in which the photo charges are accumulated, operates the second capacitor to stores the other one of the reset charges and the signal charges and changes types of charges stored in each of the first capacitor and the second capacitor, and
- wherein the types of charges comprise the reset charges and the signal charges.
An image sensor comprising a plurality of pixels, wherein a pixel among the plurality of pixels comprises:
- a photo diode;
- a floating diffusion node configured to accumulate photo charges generated by the photo diode;
- a first sampling transistor;
- and
- a second sampling transistor,
- wherein the image sensor turns on the first sampling transistor to sample one of reset charges according to a voltage of the floating diffusion node reset and signal charges according to a voltage of the floating diffusion node in which the photo charges are accumulated in a first capacitor, turns on the second sampling transistor to sample the other one of the reset charges and the signal charges from a second capacitor, and changes an order in which the first sampling transistor and the second sampling transistor are turned on.
An image sensor comprising a plurality of pixels, wherein a pixel among the plurality of pixels comprises:
- a photo detection circuit comprising a photo diode and configured to generate a pixel signal from photo charges generated by the photo diode;
- and
- an analog-to-digital converter configured to convert the pixel signal into a digital signal comprising a pixel value,
- the photo detection circuit comprises:
- a floating diffusion node configured to accumulate photo charges generated by the photo diode;
- a first capacitor;
- a second capacitor;
- a first sampling transistor configured to sample charges from the first capacitor;
- and
- a second sampling transistor configured to sample charges from the second capacitor, and
- wherein the photo detection circuit operates the first capacitor to store one of reset charges according to a voltage of the floating diffusion node and signal charges according to a voltage of the floating diffusion node in which the photo charges are accumulated, operates the second capacitor to store the other one of the reset charges and the signal charges and changes types of charges stored in the first capacitor and the second capacitor, and
- wherein the types of charges comprise the reset charges and the signal charges.
Dependencies are inferred from the claim text.