Light detecting device and electronic device

#The present technology (the technology according to the present disclosure) relates to a light detecting device and an electronic device.

#Conventionally, there is proposed, for example, a light detecting device that includes polarization units that allow a specific polarization component of incident light to transmit therethrough (see, for example, PTL 1). The light detecting device described in PTL 1 includes a plurality of polarization units, a protection film, and a plurality of microlenses laminated in this order on a semiconductor substrate including a plurality of photoelectric conversion units to suppress corrosion of the polarization units by the protection film.

#PTL 1: JP 2020-126882A

#FIG. 1 is a diagram illustrating the overall schematic configuration of a solid-state imaging device according to a first embodiment.

#FIG. 2 is a diagram taken along line A-A in FIG. 1 and illustrating a cross-sectional configuration of the solid-state imaging device.

#FIG. 3A is a diagram illustrating a planar structure of a light diffusion structure, and is a diagram illustrating a case where large 4×4 recess portions are formed as the light diffusion structure.

#Hereinafter, examples of a light detecting device and an electronic device according to embodiments of the present disclosure will be described with reference to FIGS. 1 to 15. The embodiments of the present disclosure will be described in the following order. Note that the present disclosure is not limited to the following examples. In addition, the effects described in the present specification are merely illustrative and not limiting, and other effects may be obtained. 1. First Embodiment: Solid-State Imaging Device 1-1 Overall Configuration of Solid-State Imaging Device 1-2 Configuration of Main Parts 1-3 Method for Forming Optical Element Array and Microlens Array 1-4 Modification Example 2. Second Embodiment: Example of Application to Electronic Device

#A solid-state imaging device 1 (a “light detecting device in a broad sense) according to the first embodiment of the present disclosure will be described. FIG. 1 is a diagram illustrating the overall schematic configuration of the solid-state imaging device 1 according to the first embodiment.

#The solid-state imaging device 1 in FIG. 1 is a rear surface illuminated-type Complementary Metal Oxide Semiconductor (CMOS) image sensor. As illustrated in FIG. 15, the solid-state imaging device 1 (1002) captures image light (incident light) from a subject through a lens group 1001, converts a light amount of the incident light whose image is formed on an imaging surface into an electrical signal in units of pixels, and outputs the electrical signal as a pixel signal. As illustrated in FIG. 1, the solid-state imaging device 1 includes a substrate 2, a pixel region 3, a vertical driving circuit 4, column signal processing circuits 5, a horizontal driving circuit 6, an output circuit 7, and a control circuit 8.