Semiconductor laser element
AssigneePanasonic Holdings Corporation
InventorHIROYUKI HAGINO
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Abstract
A semiconductor laser element includes a light emitting layer, a transparent electrode, and a p-side semiconductor layer disposed between the light emitting layer and the transparent electrode in a first direction. The p-side semiconductor layer includes a flat portion and a protruding portion protruding from the flat portion toward the transparent electrode, the protruding portion extending in a second direction orthogonal to the first direction, the transparent electrode extends in the second direction, and orthogonal projection of the transparent electrode onto the light emitting layer is included in orthogonal projection of the protruding portion onto the light emitting layer.
Claims9
A semiconductor laser element comprising:
- a light emitting layer;
- a transparent electrode;
- and
- a p-side semiconductor layer disposed between the light emitting layer and the transparent electrode in a first direction,
- wherein the p-side semiconductor layer includes a flat portion and a protruding portion protruding from the flat portion toward the transparent electrode, the protruding portion extending in a second direction orthogonal to the first direction,
- the transparent electrode extends in the second direction, and
- orthogonal projection of the transparent electrode onto the light emitting layer is included in orthogonal projection of the protruding portion onto the light emitting layer.
Dependencies are inferred from the claim text.