Titanium:sapphire (ti:sa) wafers, integrated ti:sa lasers, and methods of forming the same

Abstract

Provided herein are a method of preparing a Titanium:Sapphire (Ti:Sa) wafer and a photonic circuit integrated (PIC) Titanium:Sapphire (Ti:Sa) laser. The method includes depositing a titanium layer on a top surface of a first sapphire substrate; positioning a second sapphire substrate on the titanium layer, forming a face-to-face configuration with the titanium layer between the first and second sapphire substrates; annealing the first and second sapphire substrates in the face-to-face configuration, forming an annealed substrate; and polishing the annealed substrate, forming a polished substrate. The PIC-Ti:Sa laser includes a substrate; a waveguide formed on the substrate, the waveguide including a microring portion; a Ti:Sa layer formed over the microring portion of the waveguide, the Ti:Sa layer and the microring portion of the waveguide forming a microring cavity; and a laser source coupled to the waveguide. Also provided herein are methods of forming a photonic circuit integrated mode-locked Ti:Sa laser.

Dependencies are inferred from the claim text.