Thin wafer, method of manufacturing the thin wafer, stack type semiconductor device including the thin wafer and method of manufacturing the stack type semiconductor device
AssigneeSK hynix Inc.
InventorHee Sun LEE
Life of this patent
Estimating the term…
Abstract
In an embodiment, a wafer may include a substrate including a first surface and a second surface opposite to each other, a polishing stop layer formed in a selected portion of the substrate, the polishing stop layer including one or more insulation trenches each filled with an insulation material and having a depth corresponding to a thickness of the substrate, and a device layer supported by the substrate and structured to include a plurality of conductive patterns configured to electrically connect different circuit elements in the substrate.
Claims15
A wafer comprising:
- a substrate including a first surface and a second surface opposite to each other;
- a polishing stop layer formed in a selected portion of the substrate, the polishing stop layer including one or more insulation trenches each filled with an insulation material and having a depth corresponding to a thickness of the substrate;
- and
- a device layer supported by the substrate and structured to include a plurality of conductive patterns configured to electrically connect different circuit elements in the substrate.
8-20. (canceled)
A stack type semiconductor device comprising:
- a first wafer including a first substrate and a first bonding layer disposed on the first substrate;
- and
- a second wafer including a second substrate and a second bonding layer disposed on the second substrate to be attached to the first bonding layer using hybrid-bonding,
- wherein the first substrate includes a plurality of first polishing stop layers, each of the first polishing stop layers includes one or more insulation trench structures that are filled with an insulation material and have a depth corresponding to a thickness of the first substrate.
Dependencies are inferred from the claim text.