Semiconductor device
AssigneeDenso Corporation
InventorSHINGO TSUCHIMOCHI
Life of this patent
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Abstract
A semiconductor device includes a first insulating substrate and a first semiconductor element joined to the first insulating substrate through the first conductive spacer. The first insulating substrate includes a first insulating layer and a first inner conductive layer disposed at a side of the first insulating layer. The first inner conductive layer includes a surface having a first region and a second region. The second region surrounds the first region and has larger surface roughness than the first region. The first conductive spacer is joined to the first region of the first inner conductive layer through a first junction layer.
Claims23
A semiconductor device comprising:
- an insulating substrate;
- a semiconductor element joined to the insulating substrate through a conductive spacer;
- and
- a power terminal joined to the insulating substrate, wherein
- the insulating substrate includes an insulating layer and an inner conductive layer disposed at a side of the insulating layer,
- the inner conductive layer includes a surface having a first region and a second region, and the second region surrounds the first region and has larger surface roughness than the first region,
- the conductive spacer is joined to the first region of the inner conductive layer through a junction layer,
- the first region has an enlarged margin with respect to the conductive spacer, and other margins with respect to the conductive spacer, the enlarged margin being larger than the other margins in a plan view of the inner conductive layer, and
- the enlarged margin is closer to the power terminal than the other margins in the plan view.
Dependencies are inferred from the claim text.