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US 2025/0062277 A1Published application
Memory device
AssigneeMacronix International Co., Ltd.
InventorShih-Hung CHEN
Life of this patent
Estimating the term…
Abstract
A memory device includes a peripheral substrate and an array substrate. The peripheral substrate includes a page buffer and a high voltage processing circuits and has a peripheral substrate area. The array substrate includes an array. The array substrate and the peripheral substrate are stacked on each other, and a circuit distribution area of the high voltage processing circuit accounts for less than 10% of the peripheral substrate area.
Claims18
A memory device, comprising:
- a peripheral substrate comprising a page buffer and a first high voltage processing circuit and having a peripheral substrate area;
- and
- an array substrate comprising an array;
- wherein the array substrate and the peripheral substrate are stacked on each other, and a first circuit distribution area of the first high voltage processing circuit accounts for less than 10% of the peripheral substrate area.
1 more element
A memory device, comprising:
- a peripheral substrate comprising a page buffer;
- an array substrate comprising an array;
- and
- a high voltage processing substrate comprising a high voltage processing circuit;
- wherein the array substrate, the peripheral substrate and the high voltage processing substrate are stacked on each other, and the peripheral substrate does not have any high voltage processing circuit.
2 more elements
A memory device, comprising:
- a circuit board;
- a peripheral substrate comprising a page buffer;
- a high voltage processing substrate comprising a high voltage processing circuit and having a high voltage processing substrate area;
- and
- an array substrate comprising an array;
- wherein the array substrate and the peripheral substrate are stacked on the circuit board, and the high voltage processing substrate is disposed on the circuit board, and a high voltage processing circuit area of the high voltage processing circuit accounts for greater than 90% of the high voltage processing substrate area.
3 more elements
Dependencies are inferred from the claim text.