Semiconductor devices with non-conductive film retention arrangements, and associated assemblies and methods

A method of forming a semiconductor device assembly, comprising:

• providing a vertical stack of semiconductor devices, the vertical stack including a plurality of electrical interconnects, a plurality of retention structures, and a non-conductive film (NCF) between each adjacent pair of semiconductor devices of the vertical stack,
• compressing the vertical stack of semiconductor devices to reduce a distance between each adjacent pair of semiconductor devices of the vertical stack and to cause the NCF between each adjacent pair of semiconductor devices to flow away from the corresponding plurality of retention structures towards one or more gaps free from retention structures,
• wherein the plurality of retention structures between each adjacent pair of semiconductor devices is disposed peripherally to the corresponding plurality of electrical interconnects,
• wherein each of the plurality of retention structures has a height less than the distance between the corresponding adjacent pair of semiconductor devices following the compressing, and
• wherein the plurality of retention structures between each adjacent pair of semiconductor devices has a smaller first average pitch between adjacent ones of the plurality of retention structures than a second average pitch between adjacent ones of the corresponding plurality of electrical interconnects.

A semiconductor device assembly, comprising:

• one or more semiconductor devices;
• a plurality of electrical interconnects and a plurality of retention structures extending downwardly from each of the one or more semiconductor devices;
• and
• a non-conductive film (NCF) below each of the one or more semiconductor devices of and surrounding the corresponding plurality of electrical interconnects and the corresponding plurality of retention structures,
• wherein the plurality of retention structures extending from each of the one or more semiconductor devices is disposed peripherally to the corresponding plurality of electrical interconnects,
• wherein at least a portion of the NCF below each of the one or more semiconductor devices extends below the corresponding plurality of retention structures, and
• wherein the plurality of retention structures extending from each of the one or more semiconductor devices has a smaller first average pitch between adjacent ones of the plurality of retention structures than a second average pitch between adjacent ones of the corresponding plurality of electrical interconnects.