Semiconductor packages having trench structures
AssigneeSamsung Electronics Co., Ltd.
InventorTeageon KIM
Life of this patent
Estimating the term…
Abstract
A semiconductor package includes a substrate defining a first trench structure and a second trench structure in an upper surface of the substrate; a semiconductor chip on the substrate; and an underfill filling a space between the substrate and the semiconductor chip. The first trench structure and the second trench structure surround the semiconductor chip. The first trench structure includes at least one first line pattern extending along at least one side surface of the semiconductor chip. The second trench structure includes at least one second line pattern extending along at least one other side surface of the semiconductor chip. A horizontal width of the at least one first line pattern is greater than a horizontal width of the at least one second line pattern.
Claims20
A semiconductor package, comprising:
- a substrate defining a first trench structure and a second trench structure in an upper surface of the substrate;
- a semiconductor chip disposed on the substrate;
- and
- an underfill filling a space between the substrate and the semiconductor chip,
- the first trench structure and the second trench structure surrounding the semiconductor chip,
- the first trench structure including at least one first line pattern extending along at least one side surface of the semiconductor chip,
- the second trench structure including at least one second line pattern extending along at least one other side surface of the semiconductor chip, and
- a horizontal width of the at least one first line pattern is greater than a horizontal width of the at least one second line pattern.
A semiconductor package, comprising:
- a substrate defining a first trench structure and a second trench structure in an upper surface of the substrate;
- a semiconductor chip on the substrate;
- and
- an underfill filling a space between the substrate and the semiconductor chip,
- the first trench structure and the second trench structure surrounding the semiconductor chip,
- the first trench structure including at least one first line pattern extending along at least one side surface of the semiconductor chip,
- the second trench structure including at least one second line pattern extending along at least one other side surface of the semiconductor chip,
- the underfill including a first buried portion filling the at least one first line pattern and a second buried portion filling the at least one second line pattern, and
- a horizontal width of the first buried portion is greater than a horizontal width of the second buried portion.
A semiconductor package, comprising:
- a substrate defining a first trench structure and a second trench structure in an upper surface of the substrate;
- a semiconductor structure on the substrate;
- chip connection terminals between the substrate and the semiconductor structure;
- and
- an underfill filling a space between the substrate and the semiconductor structure and between the chip connection terminals,
- the first trench structure and the second trench structure surrounding the semiconductor structure,
- the first trench structure including
- first line patterns extending along a first side surface and a second side surface of the semiconductor structure,
- first hole patterns adjacent to a first corner and a third corner of the semiconductor structure, the first hole patterns communicating with the first line patterns, and
- a second hole pattern communicating with the first line patterns, the second hole pattern adjacent to a second corner of the semiconductor structure,
- the second trench structure including second line patterns extending along a third side surface and a fourth side surface of the semiconductor structure, the third side surface opposite to the first side surface, and the fourth side surface opposite to the second side surface, and
- a horizontal width of the first line patterns is greater than a horizontal width of the second line patterns.
Dependencies are inferred from the claim text.