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US 2025/0062259 A1Published application
Semiconductor device and methods of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Chien Hsiao, Chao-Wen Shih, Kuo-Chiang Ting, Yen-Ming Chen
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Abstract
A semiconductor device and methods of manufacture are discussed herein. A device includes a first semiconductor package including a first semiconductor die encapsulated in an insulating material, a first thermal expansion resistant layer over the first semiconductor die, a bonding layer over the first thermal expansion resistant layer and the insulating material, and a second semiconductor die directly bonded to the bonding layer.
Claims20
A device comprising:
- a first semiconductor package comprising a first semiconductor die encapsulated in an insulating material;
- a first thermal expansion resistant layer over the first semiconductor die;
- a bonding layer over the first thermal expansion resistant layer and the insulating material;
- and
- a second semiconductor die directly bonded to the bonding layer.
2 more elements
A method of manufacturing a semiconductor device, the method comprising:
- depositing a thermal resistant layer over a first semiconductor die;
- forming a bonding layer over the thermal resistant layer opposite the first semiconductor die;
- and
- bonding a second semiconductor die to the bonding layer with dielectric-to-dielectric and metal-to-metal bonding, wherein the bonding the second semiconductor die to the bonding layer electrically couples the first semiconductor die to the second semiconductor die.
1 more element
A device comprising:
- a first semiconductor die embedded in a first insulating layer;
- a second semiconductor die adjacent to the first semiconductor die embedded in the first insulating layer;
- a first nitride layer over the first semiconductor die;
- a bonding layer over the first nitride layer opposite the first semiconductor die;
- and
- a third semiconductor die bonded to the bonding layer opposite the first semiconductor die.
3 more elements
Dependencies are inferred from the claim text.