Rf switch device and manufacturing method thereof
AssigneeDB HiTek Co., Ltd.
InventorJa Geon KOO
Life of this patent
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Abstract
Provided is an RF switch device and a manufacturing method thereof and, more particularly, an RF switch device and a manufacturing method thereof that improve breakdown voltage characteristics and prevent an increase in the figure of merit (FoM) value, which has a trade-off relationship with the breakdown voltage characteristics, by decreasing the path along which holes move in a body region to a body contact by including a first (gate) electrode extending along a first direction between opposite ends of a second (gate) electrode extending in a second (orthogonal) direction.
Claims20
An RF switch device, comprising:
- a buried oxide (BOX) layer;
- a semiconductor layer on or over the BOX layer;
- and
- a gate electrode on or over the semiconductor layer,
- wherein the gate electrode comprises:
- a first electrode extending along a first direction;
- and
- at least one second electrode extending along a second direction,
- wherein the first electrode is between opposite ends of the second electrode.
An RF switch device, comprising:
- a buried oxide (BOX) insulating layer;
- a semiconductor layer on or over the BOX layer;
- a gate electrode on or over the semiconductor layer;
- a body region comprising a first conductivity type impurity doped region below the gate electrode;
- and
- a pair of first conductivity type body contacts spaced apart along a first direction,
- wherein the gate electrode comprises:
- a first electrode extending along the first direction;
- and
- at least one second electrode extending along a second direction,
- wherein the first electrode crosses or intersects the at least one second electrode and has opposite ends in the first direction that extend to the pair of body contacts or that overlap or are adjacent to the body contacts.
A method of manufacturing an RF switch device, comprising:
- forming a body contact extending along a second direction in a semiconductor layer on a buried oxide (BOX) layer;
- forming a device isolation film in the semiconductor layer;
- forming an impurity doped region in the semiconductor layer;
- forming a gate electrode on the semiconductor layer;
- and
- completing a body region by forming a source and a drain in the semiconductor layer,
- wherein the gate electrode comprises:
- a first electrode extending along a first direction;
- and
- at least one second electrode extending along the second direction, and
- the first electrode is between opposite ends of the second electrode.
Dependencies are inferred from the claim text.