Package structure and fabricating method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuan-Yu Huang, Sung-Hui Huang, Shang-Yun Hou
Life of this patent
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Abstract
A semiconductor device including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a warpage control pattern is provided. The first semiconductor die includes an active surface and a rear surface opposite to the active surface. The second semiconductor die is disposed on the active surface of the first semiconductor die. The insulating encapsulation is disposed on the active surface of the first semiconductor die and laterally encapsulates the second semiconductor die. The warpage control pattern is disposed on and partially covers the rear surface of the first semiconductor die.
Claims20
A semiconductor device, comprising:
- a first semiconductor die;
- a second semiconductor die disposed over a first surface of the first semiconductor die;
- a warpage control pattern disposed on a second surface of the first semiconductor die, the second surface being opposite to the first surface;
- and
- an insulating encapsulation disposed on the first semiconductor die and laterally encapsulating the second semiconductor die, wherein a sidewall of the warpage control pattern laterally offset from a sidewall of the first semiconductor die.
A structure, comprising:
- an interposer;
- a semiconductor device disposed on and electrically connected to the interposer, the semiconductor device comprising:
- a first semiconductor die;
- a second semiconductor die;
- a first insulating encapsulation laterally encapsulating the second semiconductor die;
- a metallic pattern disposed on a surface of the first semiconductor die, wherein the metallic pattern and the second semiconductor die are disposed on opposite sides of the first semiconductor die, and the metallic pattern is electrically floating;
- and
- a second insulating encapsulation disposed on the interposer and laterally encapsulating the first semiconductor die, the first insulating encapsulation and the metallic pattern.
A method, comprising:
- providing a semiconductor wafer comprising first semiconductor dies;
- disposing second semiconductor dies on the semiconductor wafer;
- laterally encapsulating the second semiconductor dies with a first insulating encapsulation formed on the semiconductor wafer such that the first semiconductor die, the second semiconductor die disposed over a first surface of the first semiconductor die, and the insulating encapsulation disposed on the first semiconductor die and laterally encapsulating the second semiconductor die is formed;
- forming warpage control patterns on the first semiconductor dies of the semiconductor wafer, the warpage control patterns being disposed on a second surface of the first semiconductor die, the second surface being opposite to the first surface;
- and
- performing a singulation process to cut the first insulating encapsulation and the semiconductor wafer to form semiconductor devices, wherein a sidewall of the warpage control pattern laterally offset from a sidewall of the first semiconductor die after performing the singulation process.
Dependencies are inferred from the claim text.