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US 2025/0062247 A1Published application
Warpage Modulation Through Implantation and the Structures Thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYang-Chih Hsueh, Yan-Zuo Tsai, Ming-Tsu Chung, Yung-Chi Lin
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Abstract
A method includes depositing a dielectric layer on a package component having a first warpage, and performing an implantation process to implant the dielectric layer with a stress modulation dopant. After the implantation process, the package component has a second warpage smaller than the first warpage.
Claims20
A method comprising:
- depositing a dielectric layer on a package component having a first warpage;
- and
- performing an implantation process to implant the dielectric layer with a stress modulation dopant, wherein after the implantation process, the package component has a second warpage smaller than the first warpage.
A structure comprising:
- a first dielectric layer;
- a second dielectric layer over and contacting the first dielectric layer, wherein the second dielectric layer comprises:
- a first portion comprising a stress modulation dopant therein, wherein the first portion of the stress modulation dopant has a first peak concentration in the second dielectric layer;
- and
- a second portion, wherein the second portion of the stress modulation dopant has a second peak concentration in the second dielectric layer, and the second peak concentration is lower than the first peak concentration;
- and
- a third dielectric layer over the second dielectric layer.
4 more elements
A structure comprising:
- a semiconductor substrate;
- active devices in the semiconductor substrate;
- an interconnect structure over the active devices, wherein the interconnect structure comprises:
- a passivation layer comprising first portions and second portions, wherein the first portions comprise a stress modulation dopant, and the second portions have at least lower concentrations of the stress modulation dopant than the first portions;
- and
- a plurality of conductive features in the passivation layers, wherein each of the plurality of conductive features is encircled by one of the second portions of the passivation layer, and is spaced apart from the first portions;
- and
- a bond layer over the passivation layer.
5 more elements
Dependencies are inferred from the claim text.