Semiconductor structure and method for manufacturing same

A method for manufacturing a semiconductor structure, comprising:

• forming an initial structure on a substrate, wherein the initial structure comprises a plurality of main semiconductor pillars arranged in an array along a first direction and a second direction, the plurality of main semiconductor pillars extend along a third direction, each of the plurality of main semiconductor pillars comprises a first sub-semiconductor pillar and a second sub-semiconductor pillar spaced apart from each other along the first direction, a first isolation layer is provided between two of the plurality of main semiconductor pillars adjacent to each other in the first direction, a second isolation layer is provided between the first sub-semiconductor pillar and the second sub-semiconductor pillar, the first isolation layer and the second isolation layer both extend along the second direction, the first isolation layer and the second isolation layer both protrude from the first sub-semiconductor pillar and the second sub-semiconductor pillar in the third direction, a first sacrificial pattern is provided on the first sub-semiconductor pillar and the second sub-semiconductor pillar in the third direction, and the first sacrificial pattern is located between the first isolation layer and the second isolation layer in the first direction;
• etching the first sacrificial pattern to expose the first sub-semiconductor pillar and the second sub-semiconductor pillar, wherein an etching rate of an etching material on the first sacrificial pattern is greater than an etching rate of the etching material on the first isolation layer and the second isolation layer;
• forming a conductive contact layer, wherein the conductive contact layer is filled between the first isolation layer and the second isolation layer and covers the first sub-semiconductor pillar and the second sub-semiconductor pillar, and the conductive contact layer extends along the second direction;
• patterning the conductive contact layer to form a plurality of independent conductive contact structures, wherein each of the plurality of conductive contact structures is in contact with the first sub-semiconductor pillar or the second sub-semiconductor pillar;
• and
• filling an isolation material in a gap between the plurality of conductive contact structures to form a third isolation layer.