Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorsSo Young YIM, Jeong Soo KIM, Geun Hyeok JANG
Life of this patent
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Abstract
A semiconductor device may include: a first conductive line extending in a first direction; a second conductive line extending in a second direction intersecting the first direction; a memory cell located between the first conductive line and the second conductive line in a third direction that is intersecting to the first and second directions; and a liner pattern located over a sidewall of the memory cell and including a first portion and a second portion, the first portion including halide impurities at a first concentration, the second portion including halide impurities at a second concentration that is lower than the first concentration.
Claims23
A semiconductor device comprising:
- a first conductive line extending in a first direction;
- a second conductive line extending in a second direction intersecting the first direction;
- a memory cell located between the first conductive line and the second conductive line in a third direction that intersects the first and second directions;
- and
- a liner pattern located over a sidewall of the memory cell and including a first portion and a second portion, the first portion including halide impurities at a first concentration, the second portion including halide impurities at a second concentration that is lower than the first concentration.
A manufacturing method of a semiconductor device, the manufacturing method comprising:
- forming a variable resistance layer;
- forming a buffer layer on a sidewall of the variable resistance layer;
- and
- forming a liner layer on the buffer layer, the liner layer including a first portion and a second portion, the first portion including halide impurities at a first concentration, the second portion including halide impurities at a second concentration that is lower than the first concentration.
Dependencies are inferred from the claim text.