Stacked deck interconnect structures for microelectronic devices and related methods

A method of forming a microelectronic device comprising:

• forming a first deck, comprising:
• forming tiers of dielectric materials interleaved with tiers of conductive materials of the first deck stacked over one another;
• forming a first conductive structure electrically coupled to a conductive contact and to a first tier of conductive material of the tiers of conductive materials of the first deck;
• and
• forming a dielectric structure electrically separating the first conductive structure from the tiers of conductive materials of the first deck except the first tier of conductive material;
• and
• forming a second deck, comprising:
• forming tiers of dielectric materials interleaved with tiers of conductive materials of the second deck stacked over one another;
• and
• forming a second conductive structure electrically coupled to the first conductive structure and to a second tier of conductive material of the tiers of conductive materials of the second deck, the second tier of conductive material defining an interconnect structure.

A microelectronic device, comprising

• a first deck, comprising:
• a first conductive contact;
• a second conductive contact horizontally adjacent to the first conductive contact;
• a first stack of materials comprising tiers of conductive material interleaved with tiers of dielectric material, the first stack of materials located over the first conductive contact and the second conductive contact;
• a first conductive structure located on a first side of the first stack of materials, the first conductive structure in contact with the first conductive contact and in contact with a first tier of the conductive material of the first stack of materials;
• and
• a second conductive structure located on a second side of the first stack of materials, opposite the first side of the first stack of materials, the second conductive structure in contact with the second conductive contact and in contact with a second tier of the conductive material of the first stack of materials;
• a second deck above the first deck, the second deck comprising:
• a second stack of materials comprising tiers of conductive material interleaved with tiers of dielectric material, the second stack of materials defining a stack of interconnect structures;
• a third conductive structure located on a first side of the second stack of materials, the third conductive structure in contact with the first conductive structure and in contact with a first tier of the conductive material of the second stack of materials;
• and
• a fourth conductive structure located on a second side of the second stack of materials, opposite the first side of the second stack of materials, the fourth conductive structure in contact with the second conductive structure and in contact with a second tier of the conductive material of the second stack of materials.