Gradually Changed Dummy Pattern Distribution Around TSVs
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Yen Liu, Chao Yi Lin
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Abstract
A method includes forming an integrated circuit device on a semiconductor substrate, forming a through-via penetrating through the semiconductor substrate, and forming dummy patterns surrounding the through-via. The dummy patterns include a first plurality of dummy patterns having a first pattern density, and a second plurality of dummy patterns. The first plurality of dummy patterns are between the through-via and the second plurality of dummy patterns. The second plurality of dummy patterns have a second pattern density different from the first pattern density.
Claims20
A method comprising:
- forming an integrated circuit device on a semiconductor substrate;
- forming a first through-via penetrating through the semiconductor substrate;
- and
- forming dummy patterns surrounding the first through-via, wherein the dummy patterns comprise:
- a first plurality of dummy patterns having a first pattern density;
- and
- a second plurality of dummy patterns, wherein the first plurality of dummy patterns are between the first through-via and the second plurality of dummy patterns, and wherein the second plurality of dummy patterns have a second pattern density different from the first pattern density.
A structure comprising:
- a semiconductor substrate;
- a first interconnect structure overlying the semiconductor substrate;
- a second interconnect structure underlying the semiconductor substrate;
- a through-via penetrating through the semiconductor substrate, wherein the through-via electrically connects a first metal pad in the first interconnect structure to a second metal pad in the second interconnect structure;
- a first dummy pad region encircling the through-via, wherein the first dummy pad region comprises first dummy patterns having a first pattern density;
- and
- a second dummy pad region encircling the first dummy pad region, wherein the second dummy pad region comprises second dummy patterns having a second pattern density different from the first pattern density.
A structure comprising:
- a semiconductor substrate;
- a first through-via and a second through-via penetrating through the semiconductor substrate;
- a redistribution structure comprising:
- a plurality of dielectric layers over the semiconductor substrate;
- and
- a plurality of metal lines in the plurality of dielectric layers;
- and
- a plurality of dummy patterns in the plurality of dielectric layers, wherein in a top view of the structure, the plurality of dummy patterns are between the first through-via and the second through-via, wherein from regions closer to the first through-via or the second through-via to a middle region between the first through-via and the second through-via, pattern densities of the plurality of dummy patterns increase.
Dependencies are inferred from the claim text.