Semiconductor Device and Fabricating Method Thereof
AssigneeUnited Microelectronics Corp.
InventorsTai-Cheng Hou, Da-Jun Lin, Fu-Yu Tsai, Bin-Siang Tsai
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Abstract
The present disclosure is related to a semiconductor device and a fabricating method thereof, and the semiconductor device includes a first dielectric layer and a first conductive structure. The first dielectric layer includes a stacked structure including a low-k dielectric layer, an etching stop layer, and a carbon-rich dielectric layer between the low-k dielectric layer and the etching stop layer, wherein a carbon concentration within the carbon-rich dielectric layer is above 15%. The first conductive structure is disposed in the first dielectric layer.
Claims17
A semiconductor device, comprising:
- a first dielectric layer, the first dielectric layer comprises a stacked structure comprising a low-k dielectric layer, an etching stop layer, and a carbon-rich dielectric layer between the low-k dielectric layer and the etching stop layer, wherein a carbon concentration within the carbon-rich dielectric layer is above 15%;
- and
- a first conductive structure, disposed in the first dielectric layer.
A method of fabricating a semiconductor device, comprising:
- forming a first dielectric layer, wherein the first dielectric layer comprises a stacked structure comprising a low-k dielectric layer, an etching stop layer, and a carbon-rich dielectric layer between the low-k dielectric layer and the etching stop layer, wherein a carbon concentration within the carbon-rich dielectric layer is above 15%;
- and
- forming a first conductive structure in the first dielectric layer.
Dependencies are inferred from the claim text.