Package architecture with bridge dies having air gaps around vias
AssigneeIntel Corporation
InventorsBrandon C. Marin, Gang Duan, Srinivas V. Pietambaram, Jeremy Ecton
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Abstract
Embodiments of a semiconductor die comprise: a first bond-pad on a first surface to couple to a package substrate, a second bond-pad on a second surface, the second surface being opposite to the first surface, a hole through the semiconductor die, a conductive pillar within the hole separated from sidewalls of the hole by an air gap, the conductive pillar coupled to the first bond-pad and the second bond-pad, and pathways conductively coupling at least two integrated circuit (IC) dies proximate to the second surface.
Claims20
A semiconductor die, comprising:
- a first bond-pad on a first surface to couple to a package substrate;
- a second bond-pad on a second surface, the second surface being opposite to the first surface;
- a hole through the semiconductor die;
- a conductive pillar within the hole separated from sidewalls of the hole by an air gap, the conductive pillar coupled to the first bond-pad and the second bond-pad;
- and
- pathways conductively coupling at least two integrated circuit (IC) dies proximate to the second surface.
An integrated circuit (IC) package, comprising:
- a package substrate having a surface with a blind cavity extending partially through the package substrate from the surface;
- a plurality of IC dies attached to the surface of the package substrate;
- and
- a bridge die in the blind cavity attached to the plurality of IC dies, the bridge die comprising:
- conductive pathways conductively coupling at least a pair of IC dies in the plurality if IC dies;
- through-silicon vias (TSVs) extending through a thickness of the bridge die;
- and
- an air gap around at least one TSV.
A package substrate, comprising:
- buildup layers;
- a cavity in the buildup layers;
- and
- a semiconductor die in the cavity, the semiconductor die comprising a plurality of conductive vias proximate to a periphery of the semiconductor die, wherein:
- each conductive via extends through a thickness of the semiconductor die, and
- an air gap surrounds each conductive via.
Dependencies are inferred from the claim text.