Shielded through substrate via structures for a silicon interconnect die and methods of forming the same

A method of forming a device structure, the method comprising:

• forming trenches in an upper portion of a silicon substrate;
• forming a front metallic shield layer, and an insulating spacer layer, and a metallic fill material layer in the trenches;
• forming through-substrate via (TSV) structures by removing horizontally-extending portions of the metallic fill material layer from above a horizontally-extending portion of the insulating spacer layer;
• thinning a backside of the silicon substrate, wherein bottom surfaces of the TSV structures are exposed and bottom capping portions of the front metallic shield layer and the insulating spacer layer are removed;
• and
• forming a first redistribution structure above the TSV structures and the insulating spacer layer, wherein the first redistribution structure comprises first redistribution wiring interconnects formed within first redistribution dielectric layers.