Frame edge reinforcement structure for package structures and methods of using the same

A device structure comprising:

• a silicon interposer comprising a silicon substrate, through-silicon via structures provided within the silicon substrate, and interposer dielectric material layers having formed therein interposer metal interconnect structures and die-side interposer bonding pads;
• at least one semiconductor die comprising in-die bonding pads that are bonded to the die-side interposer bonding pads;
• and
• a composite die frame laterally surrounding the at least one semiconductor die and including a molding compound die frame portion comprising a molding compound material and frame edge reinforcement structures located at corners of the composite die frame and comprising a material having a lower coefficient of thermal expansion at 20 degrees Celsius than the molding compound material.

A method of forming device structure, the method comprising:

• providing a structure comprising a silicon interposer including a portion of a silicon substrate, through-silicon via structures provided within the silicon substrate, and interposer dielectric material layers having formed therein interposer metal interconnect structures and die-side interposer bonding pads;
• bonding at least one semiconductor die comprising in-die bonding pads to the silicon interposer such that the in-die bonding pads are bonded to the die-side interposer bonding pads;
• and
• forming a composite die frame around the at least one semiconductor die, wherein the composite die frame includes a molding compound die frame portion comprising a molding compound material and frame edge reinforcement structures located at corners of the composite die frame and comprising a material having a lower coefficient of thermal expansion at 20 degrees Celsius than the molding compound material.