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US 2025/0062169 A1Published application
Application of a protective atomic layer deposition (ald) or plasma-enhanced chemical vapor deposition (pecvd) layer on a semiconductor die connected to a substrate via a sintered layer
OwnerFrederik Otto, Lukas Mikutta +2inventors
InventorsFrederik Otto, Lukas Mikutta, Harry Sax, Michael Weinhart
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Abstract
A method for fabricating a semiconductor device includes: providing a substrate; applying a sinter paste layer to the substrate; placing a semiconductor die on or above the sinter paste layer; performing a sintering process to convert the sinter paste layer to a sintered layer; and applying a protective layer by atomic layer deposition or by plasma-enhanced chemical layer deposition onto the semiconductor die and the sintered layer.
Claims19
A method for fabricating a semiconductor device, the method comprising:
- providing a substrate;
- providing a semiconductor die;
- applying a sinter paste layer on one or both of the substrate and the semiconductor die;
- placing the semiconductor die on the substrate;
- performing a sintering process to convert the sinter paste layer to a sintered layer;
- and
- applying a protective layer by atomic layer deposition or by plasma-enhanced chemical vapor deposition onto the semiconductor die and a portion of the sintered layer.
4 more elements
A semiconductor device, comprising:
- a substrate;
- a sintered layer disposed on the substrate;
- a semiconductor die disposed on or above the sintered layer;
- and
- an atomic layer deposited or plasma-enhanced chemical vapour deposited protective layer applied onto the semiconductor die and the sintered layer.
2 more elements
Dependencies are inferred from the claim text.