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US 2025/0062159 A1Published application
Forming notches on wafer sidewall for wafer cut
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Tung-Liang Shao
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Abstract
A method includes implanting a substrate with a dopant to form an implanted layer in the substrate, and the implanted layer is at an intermediate level between a top surface and a bottom surface of the substrate. A laser beam is projected on the implanted layer, and is projected on a sidewall of the substrate. After the laser beam is projected, the substrate is heated, so that the substrate is cut at the implanted layer, and is cut into a top portion and a bottom portion.
Claims20
A method comprising:
- implanting a substrate with a dopant to form an implanted layer in the substrate, wherein the implanted layer is at an intermediate level between a top surface and a bottom surface of the substrate;
- projecting a laser beam on the implanted layer, wherein the laser beam is projected on a sidewall of the substrate;
- and
- after the laser beam is projected, heating the substrate to separate the substrate at the implanted layer, and wherein the substrate is separated into a top portion and a bottom portion.
1 more element
A method comprising:
- implanting a substrate with a dopant to form an implanted layer in the substrate, wherein the implanted layer is at an intermediate level between a top surface and a bottom surface of the substrate;
- cutting the substrate to form a notch, wherein the notch extends into the implanted layer;
- and
- heating the substrate to separate the substrate at the notch.
1 more element
A method comprising:
- bonding a top wafer to a bottom wafer, wherein the top wafer comprises a substrate, and wherein the substrate comprises an implanted layer comprising a dopant;
- forming a high-stressed region in the substrate, wherein the high-stressed region laterally extends into the implanted layer;
- and
- forming cracks starting from the high-stressed region, wherein the cracks propagate from the cracks laterally to separate the top wafer into a top portion and a bottom portion.
1 more element
Dependencies are inferred from the claim text.