Atomic Layer Etch Process Using Plasma In Conjunction With A Rapid Thermal Activation Process
AssigneesMattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.
InventorShawming Ma
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Abstract
A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. In accordance with the present disclosure, a reactive species generated from a plasma is contacted with a surface of the film layer. Simultaneously, the substrate or semiconductor wafer is subjected to rapid thermal heating cycles that increase the temperature past the activation temperature of the reaction in a controlled manner.
Claims20
A plasma reactor for processing one or more semiconductor wafers, the plasma reactor comprising:
- a plasma chamber, the plasma chamber comprising a dielectric sidewall and a ceiling,
- an induction coil disposed about the dielectric sidewall of the plasma chamber;
- an RF power generator coupled the induction coil through a matching network, the RF power generator operable to energize the induction coil with RF power to generate a substantially inductive plasma in the plasma chamber;
- a gas supply operable to provide a gas into the plasma chamber;
- a processing chamber separated from the plasma chamber by a separation grid, the separation grid operable to filter charged species generated in the substantially inductive plasma;
- a substrate holder disposed within the processing chamber;
- a plurality of lamps disposed at a location below the substrate holder;
- a window disposed between the plurality of lamps and the substrate holder;
- and
- a controller configured to control the plurality of lamps to implement a plurality of thermal heating cycles during an etch process,
- wherein each thermal cycle increases a temperature of the substrate above an activation temperature and decreases the temperature of the substrate below the activation temperature.
A plasma reactor for processing one or more semiconductor wafers, the plasma reactor comprising:
- a plasma chamber, the plasma chamber comprising a dielectric sidewall and a ceiling,
- an induction coil disposed about the dielectric sidewall of the plasma chamber;
- an RF power generator coupled the induction coil through a matching network, the RF power generator operable to energize the induction coil with RF power to generate a substantially inductive plasma in the plasma chamber;
- a gas supply operable to provide a gas into the plasma chamber;
- a processing chamber separated from the plasma chamber by a separation grid, the separation grid operable to filter charged species generated in the substantially inductive plasma;
- a substrate holder disposed within the processing chamber;
- a plurality of lamps disposed at a location below the substrate holder;
- and
- a window disposed between the plurality of lamps and the substrate holder.
Dependencies are inferred from the claim text.