DIE BACKSIDE PROFILE for SEMICONDUCTOR DEVICES

Abstract

Embodiments of the disclosure include an apparatus and method of forming a backside profile in a semiconductor device that includes die-to-wafer bonding. The method generally includes removing a portion of a substrate layer included in a plurality of dies, the plurality of dies arranged on and bonded to an insulation layer included in a support structure, where the plurality of dies define a plurality of channels between adjacent dies, and forming a corner feature on a plurality of corners of the substrate layer adjacent to the plurality of channels. The use of a backside profile as described herein may mitigate the downstream process risks associated with trapped residue in the channels, and provide stress relief to the semiconductor device.

Dependencies are inferred from the claim text.