Method of forming structures for threshold voltage control
AssigneeASM IP Holding B.V.
InventorsMaart van Druenen, Charles Dezelah, Qi Xie, Petro Deminskyi, Giuseppe Alessio Verni, Ren-Jie Chang, Lifu Chen
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Abstract
Methods and systems for depositing rare earth metal carbide containing layers on a surface of a substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process such as an atomic layer deposition process for depositing a rare earth metal carbide containing layer onto a surface of the substrate.
Claims20
A method for depositing a rare earth metal carbide containing layer on a substrate, the method comprising the steps of:
- providing a substrate within a reaction chamber, the substrate comprising a surface layer;
- depositing a rare earth metal carbide containing layer onto the surface layer by means of a cyclical deposition process, the cyclical deposition process comprising one or more cycles, a cycle comprising:
- providing a rare earth metal precursor to the reaction chamber in a precursor pulse;
- and
- providing a carbon reactant to the reaction chamber in a reactant pulse,
- wherein the rare earth metal precursor comprises a rare earth metal and a substituted or unsubstituted cyclopentadienyl ligand, and
- wherein the carbon reactant comprises a halogenated C1 to C6 alkane or alkene.
A method for forming an electrode on a substrate, the method comprising the steps of:
- providing a substrate within a reaction chamber, the substrate comprising a first conductive layer;
- depositing a rare earth metal carbide containing layer onto the surface layer by means of a cyclical deposition process, the cyclical deposition process comprising one or more cycles, a cycle comprising:
- providing a rare earth metal precursor to the reaction chamber in a precursor pulse;
- and
- providing a carbon reactant to the reaction chamber in a reactant pulse,
- wherein the rare earth metal precursor comprises a rare earth metal and a substituted or unsubstituted cyclopentadienyl ligand, and
- wherein the carbon reactant comprises a halogenated C1 to C6 alkane or alkene.
Dependencies are inferred from the claim text.