Methods for forming low-k dielectric materials with reduced dielectric constant and increased density

A semiconductor processing method comprising:

• providing deposition precursors to a processing region of a semiconductor processing chamber, wherein the deposition precursors comprise a silicon-oxygen—and—carbon-containing precursor and a nitrogen-containing precursor, and wherein a substrate is disposed within the processing region;
• forming plasma effluents of the deposition precursors;
• and
• depositing a layer of silicon-oxygen—and—carbon-containing material on the substrate, wherein the layer of silicon-oxygen—and—carbon-containing material is characterized by an oxygen content of greater than or about 25.0 at. %, and wherein the layer of silicon-oxygen—and—carbon-containing material is characterized by a dielectric constant of less than or about 4.2.

A semiconductor processing method comprising:

• providing deposition precursors to a processing region of a semiconductor processing chamber, wherein the deposition precursors comprise a silicon-oxygen—and—carbon-containing precursor, wherein a substrate is disposed within the processing region, and wherein the silicon-oxygen—and—carbon-containing precursor comprises dimethyldimethoxysilane;
• forming plasma effluents of the deposition precursors;
• and
• depositing a layer of silicon-oxygen—and—carbon-containing material on the substrate, wherein the layer of silicon-oxygen—and—carbon-containing material is characterized by an oxygen content of greater than or about 25.0 at. %, wherein the layer of silicon-oxygen—and—carbon-containing material is characterized by a dielectric constant of less than or about 4.2, and wherein the layer of silicon-oxygen—and—carbon-containing material is characterized by a density of greater than or about 2.0.