Cooled Shield for ICP Source
AssigneesMattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.
InventorMaolin Long
Life of this patent
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Abstract
Provided is a plasma processing apparatus or system including a plasma chamber and an inductively coupled plasma source. A shielding device is disposed between the plasma chamber the inductively coupled plasma source. The shielding device includes a top annular portion, a bottom annular portion, and a plurality of thermal pads coupled to top annular portion and/or bottom annular portion with one or more retaining members. The one or more retaining members provide a compressive force to secure the one or more thermal pads against the outer surface of the dielectric wall. The plurality of thermal pads are configured to modulate a heat flux from the dielectric wall into the respective thermal pad. Methods of processing workpieces are also disclosed.
Claims20
A method of processing a workpiece, comprising:
- placing a workpiece on a workpiece support in a processing chamber of a plasma processing apparatus;
- generating a plasma with an inductively coupled plasma source in a plasma chamber of the plasma processing apparatus, the plasma chamber including a dielectric wall;
- exposing the workpiece to one or more species in the plasma to provide a treatment process for the workpiece;
- and
- shielding the plasma chamber from the inductively coupled plasma source with a shielding device comprising:
- a top annular portion,
- a bottom annular portion, and
- a plurality of thermal pads coupled to top annular portion or bottom annular portion with one or more retaining members, wherein the one or more retaining members provide a compressive force to secure the one or more thermal pads against an outer surface of the dielectric wall.
Dependencies are inferred from the claim text.