Ribbon beam angle adjustment in an ion implantation system

An ion implantation system for providing a ribbon beam to a wafer comprising:

• an ion source configured to generate the ribbon beam;
• a wafer chuck configured to hold the wafer during implantation by the ribbon beam;
• a dipole magnet disposed between the ion source and the wafer chuck, wherein the dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck, wherein a first current is applied to a first coil of the at least two coils and wherein a second current is applied to a second coil of the at least two coils, and wherein the ribbon beam angle is an angle between a first beamlet and a second beamlet of the ribbon beam;
• and
• a controller configured to:
• control the ion source, the wafer chuck, and the dipole magnet;
• determine whether the first beamlet and the second beamlet are parallel;
• and
• in accordance with a determination that the first beamlet and the second beamlet are not parallel, adjust a first magnetic field created by the dipole magnet, wherein the first magnetic field created by the dipole magnet is adjusted by adjusting a gap of the dipole magnet.

An ion implantation system for providing a ribbon beam to a wafer comprising:

• an ion source configured to generate the ribbon beam;
• a wafer chuck configured to hold the wafer during implantation by the ribbon beam;
• a dipole magnet disposed between the ion source and the wafer chuck, wherein the dipole magnet includes at least two coils configured to adjust a ribbon beam angle of the ribbon beam at one or more locations along a path of the ribbon beam between the ion source and the wafer held in the wafer chuck, wherein a first current is applied to a first coil of the at least two coils and wherein a second current is applied to a second coil of the at least two coils, and wherein the ribbon beam angle is an angle between a first beamlet and a second beamlet of the ribbon beam;
• an electrode assembly disposed between the ion source and the wafer chuck, wherein the electrode assembly is a single bend beamline assembly, and wherein the dipole magnet is disposed within the electrode assembly;
• and
• a controller configured to control the ion source, the wafer chuck, and the dipole magnet.