Midpoint sensing reference generation for stt-mram
AssigneeEverspin Technologies, Inc.
InventorsSyed M. ALAM, Yaojun ZHANG, Frederick NEUMEYER
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Abstract
The present disclosure is drawn to a magnetoresistive device including an array of memory cells arranged in rows and columns, each memory cell comprising a magnetic tunnel junction, each row comprising a word line, and each column comprising a bit line; a column select device that selects a bit line. The magnetoresistive device also includes a sense amplifier comprising a first input corresponding to a selected bit line, a second input corresponding to a reference bit line, and a data output. The plurality of columns comprise a reference column, the reference column comprising a conductive element coupled to the magnetic tunnel junctions in the reference column.
Claims20
A magnetoresistive device, comprising:
- an array comprising a plurality of magnetoresistive devices arranged in a plurality of rows and a plurality of columns,
- wherein each of the plurality of columns comprises a bit line, the bit line being one of a regular bit line and a reference bit line,
- wherein each magnetoresistive device of the plurality of magnetoresistive devices is coupled to a bit line and a select device, and
- wherein the plurality of columns comprise a reference column, the reference column comprising a subset of magnetoresistive devices of the plurality of magnetoresistive devices, each of the subset of magnetoresistive devices being coupled between the reference bit line and a bridge element.
A magnetoresistive device, comprising:
- an array comprising a plurality of memory cells arranged in a plurality of rows and a plurality of columns, each memory cell comprising a magnetic tunnel junction (MTJ), each row comprising a word line, and each column comprising a bit line;
- a column select device configured to select a bit line from the plurality of bit lines;
- a sense amplifier comprising a first input corresponding to a selected bit line, a second input corresponding to a reference bit line, and a data output;
- and
- a tracking circuitry connected to the first input to the sense amplifier, the tracking circuitry configured to adjust a temperature coefficient based on a reference current associated with the reference bit line,
- wherein the plurality of columns comprise a reference column, the reference column comprising a conductive element that provides an electrical short across the MTJs in the reference column.
Dependencies are inferred from the claim text.