Semiconductor device

A semiconductor device comprising:

• a first substrate structure including:
• a first substrate;
• a first word line, a fifth bit line, a second word line, a third word line, a sixth bit line, and a fourth word line that are arranged over the first substrate;
• and
• first, second, third, and fourth memory cells, the first memory cell being disposed between the first word line and the fifth bit line, the second memory cell being disposed between the second word line and the fifth bit line, the third memory cell being disposed between the third word line and the sixth bit line, and the fourth memory cell being disposed between the fourth word line and the sixth bit line;
• and
• a second substrate structure disposed over the first substrate structure and including a second substrate,
• wherein the first and second word lines, and the fifth bit line are connected to a first driving circuit included in the first substrate, and
• wherein the third and fourth word lines, and the sixth bit line are connected to a second driving circuit included in the second substrate.

A method for fabricating a semiconductor device comprising:

• forming a first substrate structure including:
• a first substrate;
• a first word line, a first bit line, a second bit line, a second word line, a third word line, a third bit line, a fourth bit line, and a fourth word line that are arranged over the first substrate;
• and
• first, second, third, and fourth memory cells, the first memory cell being disposed between the first word line and the first bit line, the second memory cell being disposed between the second word line and the second bit line, the third memory cell being disposed between the third word line and the third bit line, and the fourth memory cell being disposed between the fourth word line and the fourth bit line;
• forming a second substrate structure including a second substrate;
• disposing the second substrate structure over the first substrate structure in which the second substrate structure is inverted;
• and
• coupling the first substrate structure and the second substrate structure by hybrid bonding,
• wherein the first and second word lines, and the first and second bit lines are connected to a first driving circuit included in the first substrate, and
• wherein the third and fourth word lines, and the third and fourth bit lines are connected to a second driving circuit included in the second substrate.