Low dropout regulators
AssigneeSamsung Electronics Co., Ltd.
InventorsJunhan Choi, Jaewoo Park, Myoungbo Kwak, Jinook Jung
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AssigneeSamsung Electronics Co., Ltd.
InventorsJunhan Choi, Jaewoo Park, Myoungbo Kwak, Jinook Jung
Estimating the term…
Provided are a low dropout (LDO) regulator controlling operation biasing of a transistor connected to an output node to have a wide bandwidth and provide a stable voltage at a fast speed, and a memory device including the LDO regulator. The LDO regulator includes a first low voltage transistor in which a first terminal thereof is connected to an output node configured to provide an output voltage to a load and a second terminal thereof is connected to a first node, an operational amplifier configured to compare a reference voltage with the output voltage and output the comparison result to a gate terminal of a first low voltage transistor, and an operation biasing control circuit connected to the output node and the first node, and including at least one high voltage transistor.
A low dropout (LDO) regulator comprising:
A low dropout (LDO) regulator comprising:
A memory device comprising:
Dependencies are inferred from the claim text.