Semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHSU TUNG YEN, LING-SUNG WANG, CHEN-CHIEH CHIANG, BO HSIANG HUANG
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Abstract
Semiconductor device is provided. The semiconductor device includes a first pattern and a second pattern. The first pattern includes a first central part and a plurality of first noncentral parts surrounding the first central part and spaced apart from each other. The second pattern is at a second layer over the first layer of the substrate and at least partially overlapping the first pattern along a first direction passing through the first layer and the second layer. The plurality of first noncentral parts define a vortex arrangement.
Claims20
A semiconductor device, comprising:
- a first pattern at a first layer of a substrate, wherein the first pattern comprises a first central part and a plurality of first noncentral parts surrounding the first central part and spaced apart from each other;
- and
- a second pattern at a second layer over the first layer of the substrate and at least partially overlapping the first pattern along a first direction passing through the first layer and the second layer,
- wherein the plurality of first noncentral parts define a vortex arrangement.
A semiconductor device, comprising:
- a first pattern at a first layer of a substrate, wherein the first pattern comprises a first central part and a plurality of first noncentral parts surrounding the first central part;
- and
- a second pattern at a second layer over the first layer of the substrate and at least partially overlapping the first pattern along a first direction,
- wherein each of the plurality of first noncentral parts has a corresponding long axis extending along different directions.
A semiconductor device, comprising:
- a first cell comprising:
- a first pattern at a first layer of a substrate, wherein the first pattern comprises a first central part;
- and
- a second pattern at a second layer over the first layer of the substrate and at least partially overlapping the first pattern along a first direction, wherein the second pattern comprises a second central part substantially aligned with the first central part along the first direction;
- and
- a second cell, comprising:
- a third pattern at the first layer and comprising a third central part;
- and
- a fourth pattern at the second layer and at least partially overlapping the third pattern along the first direction, wherein the fourth pattern comprises a fourth central part misaligned with the third central part along the first direction.
Dependencies are inferred from the claim text.