Method for removing resistor layer, and method of manufacturing semiconductor

A method of manufacturing a semiconductor structure, comprising:

• forming a resist layer with openings exposing a seed layer;
• forming metal patterns in the openings and on the seed layer;
• and
• performing a stripping process to the resist layer by applying a solution to break the resist layer into pieces and dissolve the pieces of the resist layer in the solution, wherein the solution comprises an aprotic solvent, a protic solvent and an alkaline compound, the aprotic solvent does not include dimethyl sulfoxide, and the alkaline compound comprises potassium hydroxide (KOH), sodium hydroxide (NaOH) or a combination thereof.

A method of manufacturing a semiconductor structure, comprising:

• forming conductive through vias on a carrier;
• providing a die beside the conductive through vias;
• and
• laterally encapsulating the die and the conductive through vias with an encapsulant, wherein forming the conductive through vias on the carrier comprises:
• sequentially forming a seed layer and a resist layer on the carrier;
• patterning the resist layer to form openings exposing a portion of the seed layer;
• forming conductive patterns in the openings to cover the portion of the seed layer;
• and
• performing a stripping process with a solution to remove the patterned resist layer, wherein the solution comprises a non-dimethyl sulfoxide solvent and an alkaline compound, wherein the alkaline compound comprises a mixture of TMAH and KOH.