Photoresist stripper composition and method for forming pattern using the same

A method for forming a pattern, the method comprising:

• applying a photoresist pattern on a substrate on which a lower film is provided;
• applying a wiring pattern utilizing the photoresist pattern;
• and
• removing the photoresist pattern by a photoresist stripper composition,
• wherein the photoresist stripper composition comprises, with respect to a total weight of the photoresist stripper composition,
• about 5% to about 15% by weight of an amine compound having a molecular weight of about 80 g/mol or less, and a Hansen solubility parameter (HSPo) according to Equation 1 of about 27 to about 32,
• about 5% to about 15% by weight of a cyclic alcohol,
• about 10% to about 55% by weight of a protic polar organic solvent,
• about 10% to about 55% by weight of an aprotic polar organic solvent, and
• about 0.05% to about 1% by weight of polyhydric alcohol having 4 to 6 carbon atoms:
• HSPo
• =
• (
• HSPd
• 2
• +
• HSPp
• 2
• +
• HSPh
• 2
• )
• 0.5
• ,
• Equation
• ⁢
• l
• and
• wherein in Equation 1,
• HSPd is a solubility parameter generated by non-polar dispersive bonding, HSPp is a solubility parameter generated by polar bonding caused by permanent dipoles, and HSPh is a solubility parameter generated by hydrogen bonding.